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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ti / AlN / Si (100) - Titanium on Aluminum Nitride buffer layer on Silicon

AlN Epitaxial Film Specifications

  • Material: Titanium on Aluminum Nitride buffer layer on Si (100)
  • Size: 10×10×0.50 mm
  • Orientation: C-Plane (0.01)
  • Structure: Wurtzite
  • Lattice Constant: a= 3.11 Å
  • Type/Dopant: Undoped(N-)
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 2500˚C
  • Debye Temperature (at 27˚C): 876˚C [Ref. 9][Ref. 9]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model: BDL800IR
  • UHV Treatment: Annealing at 550˚C (estimated temperature of sample) for 5 minutes
  • Applications: Semiconductor electronics, LEDs, radars, transistors

LEED Patterns:

Ti / AlN / Si (100) - LEED Pattern 110eV
Ti / AlN / Si (100) - LEED Pattern 110eV
Ti / AlN / Si (100) - LEED Pattern 150eV
Ti / AlN / Si (100) - LEED Pattern 150eV
Ti / AlN / Si (100) - LEED Pattern 265eV
Ti / AlN / Si (100) - LEED Pattern 265eV

Ti / AlN / Si (100) - AES Spectrum

Ti / AlN / Si (100) - AES Spectrum
Ti / AlN / Si (100) - AES Spectrum

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