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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > GaN / AlN / Si (100) - Gallium Nitride with Aluminum Nitride on Silicon

Epitaxial Film Specifications

  • Material: Gallium Nitride (500nm thickness with a 200nm Aluminum Nitride buffer layer) on Silicon (111)
  • Size: 10×10×0.50 mm
  • Orientation: C-Plane (0.01)
  • Structure: Wurtzite
  • Lattice Constant: a = 3.19 Å
  • Type/Dopant: Undoped
  • Film Growth Method: Hydride Vapour Phase Epitaxy
  • Melting Temperature: 2500˚C
  • Debye Temperature (at 27˚C): 327˚C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model: BDL800IR
  • UHV Treatment: Annealing at 760˚C (estimated temp. of sample) for 10 minutes
  • Applications: Semiconductor electronics, LEDs, radars, and transistors

LEED Pattern - GaN overheated at 800˚C causing GaN layer to evaporate off exposing AlN layer:

GaN AlN Si (100) - LEED Pattern 110eV
GaN AlN Si (100) - LEED Pattern 110eV
GaN AlN Si (100) - LEED Pattern 150eV
GaN AlN Si (100) - LEED Pattern 150eV
GaN AlN Si (100) - LEED Pattern 265eV
GaN AlN Si (100) - LEED Pattern 265eV

GaN / AlN / Si (100) - AES Spectrum

GaN - AES Spectrum
GaN - AES Spectrum

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