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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > AlN / Si (100) - Aluminum Nitride on Silicon

Epitaxial Film Specifications

  • Material: Aluminum Nitride buffer layer 200nm on Silicon (100)
  • Size: 10×10×0.50mm
  • Orientation: C-Plane (0.01)
  • Structure: Wurtzite
  • Lattice Constant: a= 3.11 Å
  • Type/Dopant: Undoped
  • Film Growth Method: PVDNC Method
  • Melting Temperature: 2500˚C
  • Debye Temperature (at 27˚C): 876˚C [Ref. 9]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL800IR
  • UHV Treatment: Annealing at 800˚C (estimated temperature of sample) for 5 minutes
  • Applications: Optoelectronics, surface acoustic wave sensors, and radio frequency filters.

LEED Pattern

AlN on Si (100) - LEED Pattern 110eV
AlN on Si (100) - LEED Pattern 110eV
AlN on Si (100) - LEED Pattern 150eV
AlN on Si (100) - LEED Pattern 150eV
AlN on Si (100) - LEED Pattern 265eV
AlN on Si (100) - LEED Pattern 265eV

NOTE: GaN / AlN / Si (100) was annealed at 800˚C causing GaN laeyr to evaporate off exposing AlN buffer layer.


AlN / Si (100) - AES Spectrum

AlN / Si (100) - AES Spectrum
AlN - AES Spectrum

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