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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ti / Ga2O3-β (201) - Titanium on Gallium Oxide

Substrate Specifications

  • Material: Titanium on Gallium Oxide (201)
  • Size: 10×10×0.5 mm
  • Orientation: (201 ± 0.7˚)
  • Structure: Monoclinic
  • Lattice Constant: a = 12.23Å, b = 3.04Å, c = 5.80Å
  • Type/Dopant: N type/ Sn-doped
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 1900˚C
  • Debye Temperature: 600˚C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL800IR
  • UHV Treatment: Annealing at 520˚C (estimated temp. of sample) for 2 minutes
  • Applications: Emerging uses in sensors, power electronics and semiconductor electronics

LEED Patterns - Ga2O3-β (201) with Ti (estimated layer thickness of 48.0nm) deposited on the sample and annealed:

Ti Ga2O3-β (201) - LEED Pattern 45eV
Ga2O3-β (201) - LEED Pattern 45eV
Ti Ga2O3-β (201) - LEED Pattern 85eV
Ga2O3-β (201) - LEED Pattern 85eV
Ti Ga2O3-β (201) - LEED Pattern 120eV
Ga2O3-β (201) - LEED Pattern 120eV

Ti / Ga2O3-β with TI - AES Spectrum

Ga2O3-β with TI - AES Spectrum
Ga2O3-β with TI - AES Spectrum

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