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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ti / Ga2O3-β (010) - Titanium on Gallium Oxide

Substrate Specifications

  • Material: Titanium on Gallium Oxide (010)
  • Size: 5×5×0.5 mm
  • Orientation: (010)
  • Structure: Monoclinic
  • Lattice Constant: a = 12.23Å, b = 3.04Å, c = 5.80Å
  • Type/Dopant: Undoped
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 1900˚C
  • Debye Temperature: 600˚C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model BDL800IR
  • UHV Treatment: Annealing at 570˚C (estimated tempe. of sample) for 5 minutes
  • Applications: Emerging uses in sensors, power electronics and semiconductor electronics

LEED Pattern - Ga2O3-β (010) with Ti (estimated layer thickness of 2.3nm) deposited onto the sample and annealed:

Ti Ga2O3-β (010) - LEED Pattern 40eV
Ga2O3-β (010) - LEED Pattern 40eV
Ti Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 110eV
Ti Ga2O3-β (010) - LEED Pattern 155eV
Ga2O3-β (010) - LEED Pattern 155eV

LEED Pattern - Ga2O3-β (010) with Ti (estimated layer thickness of 15.2nm) deposited onto the sample and annealed:

Ti Ga2O3-β (010) - LEED Pattern 40eV
Ga2O3-β (010) - LEED Pattern 40eV
Ti Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 110eV
Ti Ga2O3-β (010) - LEED Pattern 155eV
Ga2O3-β (010) - LEED Pattern 155eV

Ti / Ga2O3-β with TI - AES Spectrum

Ga2O3-β with TI - AES Spectrum
Estimated thickness of Ti: 2.3nm

Ti / Ga2O3-β with TI - AES Spectrum

Ga2O3-β with TI - AES Spectrum
Estimated thickness of Ti: 15.2nm

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