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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ga2O3-β (010) - Gallium Oxide

  • Material: Gallium Oxide
  • Size: 5×5×0.5 mm
  • Orientation: (010)
  • Structure: Monoclinic
  • Lattice Constant: a = 12.23Å, b = 3.04Å, c = 5.80Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 1900˚C
  • Debye Temperature: 600˚C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing at 570˚C (estimated temperature of sample) for 15 minutes
  • Applications: Emerging uses in sensors, power electronics and semiconductor electronics

LEED Patterns Before Sputtering

Ga2O3-β (010) - LEED Pattern 50eV
Ga2O3-β (010) - LEED Pattern 50eV
Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 155eV
Ga2O3-β (010) - LEED Pattern 155eV

LEED Pattern After Sputtering (for 30 minutes at 1.0 keV) and Annealing

Ga2O3-β (010) - LEED Pattern 40eV
Ga2O3-β (010) - LEED Pattern 40eV
Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 110eV
Ga2O3-β (010) - LEED Pattern 155eV
Ga2O3-β (010) - LEED Pattern 155eV

Ga2O3-β 010 - AES Spectrum - Before

Ga2O3-β (010) - AES Spectrum
Ga2O3-β 010 - AES Spectrum - Before

Ga2O3-β 010 - AES Spectrum - After

Ga2O3-β (010) - AES Spectrum
Ga2O3-β 010 - AES Spectrum - After

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