ocivm.com > LEED and AES Data Library > Ag / Si (111)

LEED and AES Data Library • Browse by Substrate Element/CompoundBrowse by Application

Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ag / Si (111) - Silver on Silicon

Epitaxial Film SpecificationsSubstrate Specifications

  • Material: Silver on Silicon
  • Size: 10×10×0.5 mm
  • Orientation: (111)
  • Structure: Diamond Cubic
  • Lattice Constant: a = 5.43 Å
  • Type/Dopant: N Type/Undoped
  • Film Growth Method: Silver Powder Diffusion
  • Melting Temperature: 1414˚C
  • Debye Temperature (at 27˚C): 370˚C [Ref. 6]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing at 720˚C (estimated temperature of sample) for 30 seconds
  • Applications: Solid state devices, microelectronics, lasers, and solar panels

LEED Patterns: Si with Ag powder

Ag on Si (111) - LEED Pattern 80eV
Ag on Si (111) - LEED Pattern 80eV
Ag on Si (111) - LEED Pattern 110eV
Ag on Si (111) - LEED Pattern 110eV
Ag on Si (111) - LEED Pattern 145eV
Ag on Si (111) - LEED Pattern 145eV

Si with Ag - AES Spectrum

Ag / Si (111) - AES Spectrum
Si - AES Spectrum

Related Links