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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ti / SiC 6H (0001) - Silicon Carbide 6H with Titanium

AlN Epitaxial Film Specifications

  • Material: Silicon Carbide 6H (0001)
  • Size: 5×5×0.33 mm
  • Orientation: 6H (0001)
  • Structure: Hexagonal
  • Lattice Constant: a =3.08 A, c = 15.117 A
  • Type/Dopant: Undoped
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 2730˚C
  • Debye Temperature: 930˚C [Ref. 4]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL 800IR
  • UHV Treatment: Annealing at 690˚C (estimated temperature of sample) for 5 minutes
  • Applications: Automotive industry, power electronics and LEDs

LEED Pattern - SiC (6H) with Ti (estimated layer thickness of 56.0 nm) deposited on the sample and annealed:

Ti / SiC 6H (0001) - LEED Pattern 30eV
Ti / SiC 6H (0001) - LEED Pattern 30eV
Ti / SiC 6H (0001) - LEED Pattern 50eV
Ti / SiC 6H (0001) - LEED Pattern 50eV
Ti / SiC 6H (0001) - LEED Pattern 70eV
Ti / SiC 6H (0001) - LEED Pattern 70eV
Ti / SiC 6H (0001) - LEED Pattern 90eV
Ti / SiC 6H (0001) - LEED Pattern 90eV
Ti / SiC 6H (0001) - LEED Pattern 130eV
Ti / SiC 6H (0001) - LEED Pattern 130eV
Ti / SiC 6H (0001) - LEED Pattern 220eV
Ti / SiC 6H (0001) - LEED Pattern 220eV

Ti / SiC 6H (0001) - AES Spectrum

Ti / SiC 6H (0001) - AES Spectrum
Ti / SiC 6H (0001) - AES Spectrum

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