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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > SiC 6H (0001) - Silicon Carbide

Substrate Specifications

  • Material: Silicon Carbide (0001)
  • Size: 5×5×0.33 mm
  • Orientation: 6H (0001)
  • Structure: Hexagonal
  • Lattice Constant: a =3.08 A, c = 15.117 A
  • Type/Dopant: Undoped
  • Growth Method: MOCVD
  • Melting Temperature: 2730˚C
  • Debye Temperature: 930˚C [Ref. 4]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL 800IR
  • UHV Treatment: Annealing at 520˚C (estimated temperature of sample) for 2 minutes
  • Applications: Automotive industry, power electronics and LEDs

LEED Patterns

SiC 6H (0001) - LEED Pattern 30eV
SiC 6H (0001) - LEED Pattern 30eV
SiC 6H (0001) - LEED Pattern 50eV
SiC 6H (0001) - LEED Pattern 50eV
SiC 6H (0001) - LEED Pattern 70eV
SiC 6H (0001) - LEED Pattern 70eV
SiC 6H (0001) - LEED Pattern 90eV
SiC 6H (0001) - LEED Pattern 90eV
SiC 6H (0001) - LEED Pattern 130eV
SiC 6H (0001) - LEED Pattern 130eV
SiC 6H (0001) - LEED Pattern 220eV
SiC 6H (0001) - LEED Pattern 220eV

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