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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Crystal Substrates > SiC 6H (0001) - Silicon Carbide

Substrate Specifications

  • Material: Silicon Carbide (0001)
  • Size: 5 × 5 × 0.33 mm
  • Orientation: 6H (0001)
  • Structure: Hexagonal
  • Lattice Constant: a =3.08 A, c = 15.117 A
  • Type/Dopant: Undoped
  • Growth Method: MOCVD
  • Melting Temperature: 2730 °C
  • Debye Temperature: 930 °C [Ref. 4]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL800IR
  • UHV Treatment: Annealing at 520 °C (estimated temperature of sample) for 2 minutes
  • Applications: Automotive industry, power electronics and LEDs

LEED Patterns

SiC 6H (0001) - LEED Pattern 30 eV
SiC 6H (0001) - LEED Pattern 30 eV
SiC 6H (0001) - LEED Pattern 50 eV
SiC 6H (0001) - LEED Pattern 50 eV
SiC 6H (0001) - LEED Pattern 70 eV
SiC 6H (0001) - LEED Pattern 70 eV
SiC 6H (0001) - LEED Pattern 90 eV
SiC 6H (0001) - LEED Pattern 90 eV
SiC 6H (0001) - LEED Pattern 130 eV
SiC 6H (0001) - LEED Pattern 130 eV
SiC 6H (0001) - LEED Pattern 220 eV
SiC 6H (0001) - LEED Pattern 220 eV

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