Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > Ti / AlN / Si (100) - Titanium on Aluminum Nitride buffer layer on Silicon
Specifications
- Material: Titanium on Aluminum Nitride buffer layer on Si (100)
- Size: 10 × 10 × 0.50 mm
- Orientation: C-Plane (0.01)
- Structure: Wurtzite
- Lattice Constant: a= 3.11 Å
- Type/Dopant: Undoped(N-)
- Film Growth Method: Molecular Beam Epitaxy
- Melting Temperature: 2500 °C
- Debye Temperature (at 27 °C): 876 °C [Ref. 9]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealing at 550 °C (estimated temperature of sample) for 5 minutes
- Applications: Semiconductor electronics, LEDs, radars, transistors
LEED Patterns
Ti / AlN / Si (100) - LEED Pattern 110 eV
Ti / AlN / Si (100) - LEED Pattern 150 eV
Ti / AlN / Si (100) - LEED Pattern 265 eV
Ti / AlN / Si (100) - AES Spectrum
Ti / AlN / Si (100) - AES Spectrum
Related Links
