Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > GaN / AlN / Si (100) - Gallium Nitride with Aluminum Nitride on Silicon
Specifications
- Material: Gallium Nitride (500 nm thickness with a 200 nm Aluminum Nitride buffer layer) on Silicon (111)
- Size: 10 × 10 × 0.50 mm
- Orientation: C-Plane (0.01)
- Structure: Wurtzite
- Lattice Constant: a = 3.19 Å
- Type/Dopant: Undoped
- Film Growth Method: Hydride Vapour Phase Epitaxy
- Melting Temperature: 2500 °C
- Debye Temperature (at 27 °C): 327 °C[Ref. 3]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealing at 760 °C (estimated temp. of sample) for 10 minutes
- Applications: Semiconductor electronics, LEDs, radars, and transistors
LEED Pattern - GaN overheated at 800˚C causing GaN layer to evaporate off exposing AlN layer
GaN AlN Si (100) - LEED Pattern 110 eV
GaN AlN Si (100) - LEED Pattern 150 eV
GaN AlN Si (100) - LEED Pattern 265 eV
GaN / AlN / Si (100) - AES Spectrum
GaN - AES Spectrum
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