Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > Ti / AlN / Si (0001) - Titanium on Aluminum Nitride on Silicon
Specifications
- Material: An estimated 12nm of Ti on 200nm of AlN on Si
- Size: 10 mm × 10 mm × 0.5 mm
- Orientation: (111) with edge (110)
- Structure: Wurtzite
- Lattice Constant: a= 3.11 Å [Ref. 9]
- Type/Dopant:
- AlN: Undoped
- Si: P type, B-doped
- Film Growth Method: Molecular Beam Epitaxy
- Melting Temperature: 2500 °C
- Debye Temperature (at 27 °C): 876 °C [Ref. 9]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealed at 950 °C for 2 Minutes
- Applications: A cost effective way to replace AlN single crystal substrates. Valuable in semiconductor electronics, LEDs, radars, and transistors
LEED Patterns
Ti / AlN / Si (0001) - LEED Pattern 145 eV
Ti / AlN / Si (0001) - LEED Pattern 180 eV
Ti / AlN / Si (0001) - LEED Pattern 230 eV
Ti / AlN / Si (0001) - AES Spectrum
Ti / AlN / Si (0001) - AES Spectrum
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