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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Epitaxial Films on Substrates > Ti / SiC 4H - Titanium on Silicon Carbide 4H

Specifications

  • Material: An estimated 186 Å of Titanium on Silicon Carbide (4H)
  • Size: 10 mm × 10 mm × 0.33 mm thick
  • Orientation: 4H (0001)
  • Structure: Hexagonal
  • Lattice Constant: a =3.08 Å, c = 15.08 Å
  • Type/Dopant: Undoped
  • Film Growth Method: MOCVD
  • Melting Temperature: 2830 °C [Ref. 4]
  • Debye Temperature: 1030 °C [Ref. 4]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing at 693 °C (estimated temperature of sample) for 5 minutes
  • Applications: Common semiconductor material for short wavelength optoelectronic devices

LEED Pattern - SiC (4H) with Ti (estimated layer thickness of 56.0 nm) deposited on the sample and annealed

Ti / SiC 4H - LEED Pattern 90 eV
Ti / SiC 4H - LEED Pattern 60 eV
Ti / SiC 4H - LEED Pattern 120 eV
Ti / SiC 4H - LEED Pattern 120 eV
Ti / SiC 4H - LEED Pattern 200 eV
Ti / SiC 4H - LEED Pattern 200 eV

Ti / SiC 4H - AES Spectrum

Ti / SiC 4H - AES Spectrum
Ti / SiC 4H - AES Spectrum

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