Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > Ti / SiC 4H - Titanium on Silicon Carbide 4H
Specifications
- Material: An estimated 186 Å of Titanium on Silicon Carbide (4H)
- Size: 10 mm × 10 mm × 0.33 mm thick
- Orientation: 4H (0001)
- Structure: Hexagonal
- Lattice Constant: a =3.08 Å, c = 15.08 Å
- Type/Dopant: Undoped
- Film Growth Method: MOCVD
- Melting Temperature: 2830 °C [Ref. 4]
- Debye Temperature: 1030 °C [Ref. 4]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model BDL800IR
- UHV Treatment: Annealing at 693 °C (estimated temperature of sample) for 5 minutes
- Applications: Common semiconductor material for short wavelength optoelectronic devices
LEED Pattern - SiC (4H) with Ti (estimated layer thickness of 56.0 nm) deposited on the sample and annealed
Ti / SiC 4H - LEED Pattern 60 eV
Ti / SiC 4H - LEED Pattern 120 eV
Ti / SiC 4H - LEED Pattern 200 eV
Ti / SiC 4H - AES Spectrum
Ti / SiC 4H - AES Spectrum
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