Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > SiC 4H (0001) - Silicon Carbide
Substrate Specifications
- Material: Silicon Carbide
- Size: 10 mm x 10 mm x 0.525 mm
- Orientation: (0001) and (4H)
- Structure: Hexagonal
- Lattice Constant: a=3.07 Å c = 10.05 Å
- Type/Dopant: N type, nitrogen-doped
- Growth Method: MOCVD
- Melting Temperature: 2730 °C [Ref. 28]
- Debye Temperature: 930 °C [Ref. 28]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model: BDL800IR
- UHV Treatment: Annealing
- Applications: Automotive industry, power electronics and LEDs [Ref. 28]
LEED Patterns
SiC 4H (0001) - AES Spectrum
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