Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > SiC 6H (0001) - Silicon Carbide
Substrate Specifications
- Material: Silicon Carbide (0001)
- Size: 5 × 5 × 0.33 mm
- Orientation: 6H (0001)
- Structure: Hexagonal
- Lattice Constant: a =3.08 A, c = 15.117 A
- Type/Dopant: Undoped
- Growth Method: MOCVD
- Melting Temperature: 2730 °C
- Debye Temperature: 930 °C [Ref. 4]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES Model BDL800IR
- UHV Treatment: Annealing at 520 °C (estimated temperature of sample) for 2 minutes
- Applications: Automotive industry, power electronics and LEDs
LEED Patterns
SiC 6H (0001) - LEED Pattern 30 eV
SiC 6H (0001) - LEED Pattern 50 eV
SiC 6H (0001) - LEED Pattern 70 eV
SiC 6H (0001) - LEED Pattern 90 eV
SiC 6H (0001) - LEED Pattern 130 eV
SiC 6H (0001) - LEED Pattern 220 eV
Related Links
