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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Epitaxial Films on Substrates > AlN / Si (111) - Aluminum Nitride on Silicon

Specifications

  • Material: 200 nm of AlN on Si
  • Size: 10 × 10 × 0.5 mm
  • Orientation: (111) with edge (110)
  • Structure: Wurtzite
  • Lattice Constant: a = 3.11 Å [Ref. 9]
  • Type/Dopant:
    • AlN: Undoped
    • Si: P type, B-doped
  • Growth Method: PVDNC
  • Melting Temperature: 2500 °C
  • Debye Temperature (at 27 °C): 876 °C [Ref. 9]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model LEED 800
  • UHV Treatment: Annealing at 800 °C for 2 minutes
  • Applications: A cost effective way to replace AlN single crystal substrates. Valuable in optoelectronics, surface acoustic wave sensors, and radio frequency filters.

LEED Pattern

AlN on Si (111) - LEED Pattern 160 eV
AlN on Si (111) - LEED Pattern 160 eV
AlN on Si (111) - LEED Pattern 220 eV
AlN on Si (111) - LEED Pattern 220 eV
AlN on Si (111) - LEED Pattern 490 eV
AlN on Si (111) - LEED Pattern 490 eV

AlN on Si (111) - AES Spectrum

AlN on Si (111) - AES Spectrum
AlN on Si (111) - AES Spectrum

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