Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > SiC - 3C / Si (100) - Silicon Carbide on Silicon
Specifications
- Material: Silicon Carbide on Silicon (100) Wafer
- Size: 10 × 5 × 0.525 mm
- Orientation: (3C)
- Structure: Cubic
- Lattice Constant: a = 4.36 Å
- Type/Dopant: N Type/ Undoped
- Film Growth Method: Plasma-Enhanced Chemical Vapour Deposition
- Melting Temperature: 2730 °C
- Debye Temperature (at 27 °C): 930 °C [Ref. 4]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealing at 520 °C (estimated temperature of sample) for 2 minutes
- Applications: Automotive industry, power electronics and LEDs
LEED Patterns
SiC / Si (100) - LEED Pattern 40 eV
SiC / Si (100) - LEED Pattern 90 eV
SiC / Si (100) - LEED Pattern 290 eV
SiC / Si (100) - AES Spectrum
SiC / Si (100) - AES Spectrum
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