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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > SiC / Si (100) - Silicon Carbide on Silicon

Epitaxial Film Specifications

  • Material: Silicon Carbide on Silicon (100) Wafer
  • Size: 10×5×0.525 mm
  • Orientation: (3C)
  • Structure: Cubic
  • Lattice Constant: a = 4.36 Å
  • Type/Dopant: N Type/ Undoped
  • Film Growth Method: Plasma-Enhanced Chemical Vapour Deposition
  • Melting Temperature: 2730˚C
  • Debye Temperature (at 27˚C): 930˚C [Ref. 4]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model: BDL800IR
  • UHV Treatment: Annealing at 520˚C (estimated temperature of sample) for 2 minutes
  • Applications: Automotive industry, power electronics and LEDs

LEED Patterns:

SiC / Si (100) - LEED Pattern 40eV
SiC / Si (100) - LEED Pattern 40eV
SiC / Si (100) - LEED Pattern 90eV
SiC / Si (100) - LEED Pattern 90eV
SiC / Si (100) - LEED Pattern 290eV
SiC / Si (100) - LEED Pattern 290eV

SiC / Si (100) - AES Spectrum

SiC / Si (100) - AES Spectrum
SiC / Si (100) - AES Spectrum

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