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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > SiC 4H (0001) - Silicon Carbide

Substrate Specifications

  • Material: Silicon Carbide
  • Size: 10 mm x 10 mm x 0.525 mm
  • Orientation: (0001) and (4H)
  • Structure: Hexagonal
  • Lattice Constant: a=3.07 Å c = 10.05 Å
  • Type/Dopant: N type, nitrogen-doped
  • Growth Method: MOCVD
  • Melting Temperature: 2730 °C [Ref. 28]
  • Debye Temperature: 930 °C [Ref. 28]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model: BDL800IR
  • UHV Treatment: Annealing
  • Applications: Automotive industry, power electronics and LEDs [Ref. 28]

LEED Patterns

SiC 4H (0001) - LEED Pattern 110 eV
SiC 4H (0001) - LEED Pattern 110 eV
SiC 4H (0001) - LEED Pattern 125 eV
SiC 4H (0001) - LEED Pattern 125 eV
SiC 4H (0001) - LEED Pattern 200 eV
SiC 4H (0001) - LEED Pattern 200 eV

SiC 4H (0001) - AES Spectrum

SiC 4H (0001) - AES Spectrum
SiC 4H (0001) - AES Spectrum

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