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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > Si (100) - Silicon

Substrate Specifications

  • Material: Silicon
  • Size: 10 mm x 10 mm x 0.5 mm
  • Orientation: (100)
  • Structure: Cubic
  • Lattice Constant: a= 5.43 Å
  • Type/Dopant: N type, P doped
  • Growth Method: Czochralski
  • Melting Temperature: 1414 °C
  • Debye Temperature (at 27 °C): 370 °C [Ref. 29]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing
  • Applications: Solid state devices, microelectronics, laser, and in solar panels

LEED Patterns

Si 100- LEED Pattern 90 eV
Si 100- LEED Pattern 90 eV
Si 100 - LEED Pattern 100 eV
Si 100- LEED Pattern 100 eV
Si 100 - LEED Pattern 120 eV
Si 100- LEED Pattern 120 eV

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