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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Si (001) - Silicon

Substrate Specifications

  • Material: Silicon (001)
  • Size: 10×10×0.5 mm
  • Orientation: (001)
  • Structure: 1×1
  • Lattice Constant: a = 3.88 Å
  • Type/Dopant: N Type/undoped
  • Growth Method: Czochralski
  • Melting Temperature: 1414˚C
  • Debye Temperature (at 27˚C): 370˚C [Ref. 6]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES Model BDL800IR
  • UHV Treatment: Annealing at 720˚C (estimated temperature of sample) for 2 minutes
  • Applications: Solid state devices, microelectronics, lasers, and in solar panels

LEED Pattern Silicon (001) Structure 1x1

Si (001) Structure: 1x1  - LEED Pattern
Si (001) Structure: 1x1 - LEED Pattern

LEED Pattern Silicon (001) Structure 2x6

Si (001) Structure: 2x6  - LEED Pattern
Si (001) Structure: 2x6 - LEED Pattern

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