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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > GaN (0001) - Gallium Nitride v2

  • Material: Gallium Nitride
  • Size: 10 mm x 10 mm x 0.35mm
  • Orientation: (0001)
  • Structure: Wurtzite
  • Lattice Constant: a = 3.186 Å c = 5.186 Å
  • Type/Dopant: N type
  • Growth Method: Czochralski
  • Melting Temperature: 2500 °C
  • Debye Temperature: 868 ± 20 K [Ref. 34]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing
  • Applications: high power and high temperature applications, optoelectronic devices. [Ref. 35]

LEED Patterns

GaN - LEED Pattern 195 eV
GaN - LEED Pattern 195 eV
GaN - LEED Pattern 260 eV
GaN - LEED Pattern 260 eV
GaN - LEED Pattern 280 eV
GaN - LEED Pattern 280 eV

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