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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > GGG (111) - Gadollinium Gallium Garnet

Substrate Specifications

  • Material: Gadollinium Gallium Garnet
  • Size: 5×5×0.5 mm
  • Orientation: (111)
  • Structure: Cubic
  • Lattice Constant: a = 12.38 Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 1800˚C
  • Debye Temperature: 250 ˚C [Ref. 7]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model BDL800IR
  • UHV Treatment: Annealing at 520˚C (estimated temperature of sample) for 2 minutes
  • Applications: Semiconductor electronics and in the optical industry

LEED Patterns

GGG (111) - LEED Pattern 205eV
GGG (111) - LEED Pattern 205eV
GGG (111) - LEED Pattern 235eV
GGG (111) - LEED Pattern 235eV
GGG (111) - LEED Pattern 275eV
GGG (111) - LEED Pattern 275eV

GGG (111) - AES Spectrum

GGG (111) - AES Spectrum
GGG - AES Spectrum

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