Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Ga2O3-β (201) - Gallium Oxide #2
- Material: β- Gallium Oxide
- Size: 10 mm x 10 mm x 0.6 mm
- Orientation: (201 ± 0.7°)
- Structure: Monoclinic
- Lattice Constant: a = 12.23 Å b = 3.04 Å c = 5.80 Å β = 103.7 °
- Type/Dopant: N type / Sn-doped
- Growth Method: Czochralski
- Melting Temperature: 1900 °C
- Debye Temperature: 738 K [Ref. 14]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model: BDL800IR
- UHV Treatment: Annealing
- Applications: ultra-low power loss, high-efficiency power applications, and used in field effect transistors [Ref. 15]
LEED Patterns
Ga2O3 (201) - LEED Pattern 100 eV
Ga2O3 (201) - LEED Pattern 140 eV
Ga2O3 (201) - LEED Pattern 185 eV
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