Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > Ti / Ga2O3-β (201) - Titanium on Gallium Oxide
Specifications
- Material: Titanium on Gallium Oxide (201)
- Size: 10 × 10 × 0.5 mm
- Orientation: (201 ± 0.7 °)
- Structure: Monoclinic
- Lattice Constant: a = 12.23 Å, b = 3.04 Å, c = 5.80 Å
- Type/Dopant: N type/ Sn-doped
- Film Growth Method: Molecular Beam Epitaxy
- Melting Temperature: 1900 °C
- Debye Temperature: 600 °C [Ref. 3]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model LEED 800
- UHV Treatment: Annealing at 520 °C (estimated temp. of sample) for 2 minutes
- Applications: Emerging uses in sensors, power electronics and semiconductor electronics
LEED Patterns - Ga2O3-β (201) with Ti (estimated layer thickness of 48.0nm) deposited on the sample and annealed
Ti / Ga2O3-β with TI - AES Spectrum
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