Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Ga2O3-β (010) - Gallium Oxide
- Material: Gallium Oxide
- Size: 5 × 5 × 0.5 mm
- Orientation: (010)
- Structure: Monoclinic
- Lattice Constant: a = 12.23 Å, b = 3.04 Å, c = 5.80 Å
- Type/Dopant: Undoped
- Growth Method: Czochralski
- Melting Temperature: 1900 °C
- Debye Temperature: 600 °C [Ref. 3]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model LEED 800
- UHV Treatment: Annealing at 570 °C (estimated temperature of sample) for 15 minutes
- Applications: Emerging uses in sensors, power electronics and semiconductor electronics
LEED Patterns Before Sputtering
Ga2O3-β (010) - LEED Pattern 50 eV
Ga2O3-β (010) - LEED Pattern 110 eV
Ga2O3-β (010) - LEED Pattern 155 eV
LEED Pattern After Sputtering (for 30 minutes at 1.0 keV) and Annealing
Ga2O3-β (010) - LEED Pattern 40 eV
Ga2O3-β (010) - LEED Pattern 110 eV
Ga2O3-β (010) - LEED Pattern 155 eV
Ga2O3-β 010 - AES Spectrum - Before
Ga2O3-β 010 - AES Spectrum - Before
Ga2O3-β 010 - AES Spectrum - After
Ga2O3-β 010 - AES Spectrum - After
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