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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > Ge (100) - Germanium

Substrate Specifications

  • Material: Germanium
  • Size: 10×10×0.5
  • Orientation: (100)
  • Structure: Face Centered Diamond Cubic
  • Lattice Constant: a = 5.658 Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 938˚C
  • Debye Temperature: 97 ˚C [Ref. 12]
  • Surface Debye Temperature: Unpublished
  • Characterization Instrument Used: MCP-LEED
    Model BDL800IR-MCP1
  • UHV Treatment: Flash Annealing at 800˚C
  • Applications: Semiconductor as a transistor and used to produce alloys

LEED Patterns

Ge (100) - LEED Pattern 51eV
Ge (100) - LEED Pattern 40eV
Ge (100) - LEED Pattern 70eV
Ge (100) - LEED Pattern 70eV
Ge (100) - LEED Pattern 80eV
Ge (100) - LEED Pattern 80eV
Ge (100) - LEED Pattern 110eV
Ge (100) - LEED Pattern 110eV
Ge (100) - LEED Pattern 120eV
Ge (100) - LEED Pattern 120eV
Ge (100) - LEED Pattern 155eV
Ge (100) - LEED Pattern 125eV

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