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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > GaN (0001) - Gallium Nitride

  • Material: Gallium Nitride
  • Size: 10 × 10 × 0.50 mm
  • Orientation: (0001)
  • Structure: Wurtzite
  • Lattice Constant: a = 3.16 Å, c = 5.125 Å
  • Type/Dopant: Undoped
  • Growth Method: HVPE Process
  • Melting Temperature: 2500 °C
  • Debye Temperature (at 27 °C): 327 °C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: MCP-LEED
    Model LEED 800 MCP2 100DEG
  • UHV Treatment: Flash Annealing
  • Applications: Semiconductor electronics, LEDs, radars, and transistors

LEED Patterns

GaN (0001) - LEED Pattern 65 eV
GaN (0001) - LEED Pattern 64eV
GaN (0001) - LEED Pattern 80 eV
GaN (0001) - LEED Pattern 90 eV
GaN (0001) - LEED Pattern 147 eV
GaN (0001) - LEED Pattern 160 eV

GaN (0001) - AES Spectrum

GaN - AES Spectrum
GaN (0001)- AES Spectrum

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