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Low Energy Electron Diffraction and Auger Electron Spectroscopy Data Library


Crystal Substrates > GaN (0001) - Gallium Nitride

  • Material: Gallium Nitride
  • Size: 10×10×0.50 mm
  • Orientation: (0001)
  • Structure: Wurtzite
  • Lattice Constant: a = 3.16 Å, c = 5.125 Å
  • Type/Dopant: Undoped
  • Growth Method: HVPE Process
  • Melting Temperature: 2500˚C
  • Debye Temperature (at 27˚C): 327˚C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: MCP-LEED
    Model BDL800IR-MCP2 100DEG
  • UHV Treatment: Flash Annealing
  • Applications: Semiconductor electronics, LEDs, radars, and transistors

LEED Patterns

GaN - LEED Pattern 65eV
GaN - LEED Pattern 64eV
GaN - LEED Pattern 80eV
GaN - LEED Pattern 90eV
GaN - LEED Pattern 147eV
GaN - LEED Pattern 160eV

GaN - AES Spectrum

GaN - AES Spectrum
GaN - AES Spectrum

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