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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Epitaxial Films on Substrates > Ti on Al2O3 (11-02) - Titanium on Aluminum Oxide

Specifications

  • Material: 10Å of Titanium on Aluminum Oxide
  • Size: 10 mm x 5 mm x 0.5 mm
  • Orientation: A-Plane (11-02) with edge (11-20)
  • Structure: Hexagonal
  • Lattice Constant: a = 4.758 Å c = 12.992 Å
  • Type/Dopant: Undoped
  • Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 2040 °C
  • Debye Temperature: 726.85°C at 26.85°C (for Al2O3, orientation not provided) [Ref. 15]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model: BDL800IR
  • UHV Treatment: Annealing to 1000 ° for 5 minutes
  • Applications: Used extensively as a substrate for epitaxial films (nitrides and many others)

LEED Patterns

Ti on Al2O3 (11-02) - LEED Pattern 140 eV
Ti on Al2O3 (11-02) - LEED Pattern 140 eV
Ti on Al2O3 (11-02) - LEED Pattern 210 eV
Ti on Al2O3 (11-02) - LEED Pattern 210 eV
Ti on Al2O3 (11-02) - LEED Pattern 315 eV
Ti on Al2O3 (11-02) - LEED Pattern 315 eV

Al2O3 (11-02) with Ti - AES Spectrum

Ti on Al203 (11-02) - AES Spectrum
Al2O3 (11-02) with Ti - AES Spectrum

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