Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > Ti on Al2O3 (11-02) - Titanium on Aluminum Oxide
Specifications
- Material: 10Å of Titanium on Aluminum Oxide
- Size: 10 mm x 5 mm x 0.5 mm
- Orientation: A-Plane (11-02) with edge (11-20)
- Structure: Hexagonal
- Lattice Constant: a = 4.758 Å c = 12.992 Å
- Type/Dopant: Undoped
- Growth Method: Molecular Beam Epitaxy
- Melting Temperature: 2040 °C
- Debye Temperature: 726.85°C at 26.85°C (for Al2O3, orientation not provided) [Ref. 15]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model: BDL800IR
- UHV Treatment: Annealing to 1000 ° for 5 minutes
- Applications: Used extensively as a substrate for epitaxial films (nitrides and many others)
LEED Patterns
Ti on Al2O3 (11-02) - LEED Pattern 140 eV
Ti on Al2O3 (11-02) - LEED Pattern 210 eV
Ti on Al2O3 (11-02) - LEED Pattern 315 eV
Al2O3 (11-02) with Ti - AES Spectrum
Al2O3 (11-02) with Ti - AES Spectrum
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