Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Epitaxial Films on Substrates > SOS (100) 0.6µm – Silicon on Sapphire 1.0µm Silicon Film
Specifications
- Material: Silicon on Sapphire Film 0.6 µm
- Size: 10 mm x 10 mm x 0.46 mm
- Silicon Orientation (100)
- Sapphire Orientation : (11-02, R Plane)
- Silicon Lattice Constant: a=5.431 Å
- Sapphire Lattice Constant: a=4.785 Å c=12.991 Å [Ref. 25]
- Type/Dopant: Intrinsic type, undoped
- Growth Method: Unpublished
- Silicon Melting Temperature: 1414 °C [Ref. 25]
- Sapphire Melting Temperature: 2040 °C [Ref. 26]
- Silicon Debye Temperature: 645 K [Ref. 27]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model: BDL800IR - MCP
- UHV Treatment: Annealing
- Applications: aerospace and military applications because of inherent resistance to radiation [Ref. 26]
LEED Patterns
SOS (100) 0.6 µm - LEED Pattern 70 eV
SOS (100) 0.6 µm - LEED Pattern 90 eV
SOS (100) 0.6 µm - LEED Pattern 120 eV
SOS (100) 0.6 µm – AES Spectrum
SOS (100) 0.6 µm – AES Spectrum
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