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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Crystal Substrates > SiC - 3C / Si (100) #2 - Silicon Carbide on Silicon

Substrate Specifications

  • Material: Silicon Carbide on Silicon (100) Wafer
  • Size: 10 mm x 10 mm x 0.525 mm
  • Orientation: (3C)
  • Structure: Cubic
  • Lattice Constant: a=4.36 Å
  • Type/Dopant: N type, undoped
  • Growth Method: Plasma-Enhanced Chemical Vapour
  • Melting Temperature: 2730 °C [Ref. 12]
  • Debye Temperature: 930 °C [Ref. 12]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR - MCP
  • UHV Treatment: Annealing
  • Applications: Automotive industry, power electronics and LEDs [Ref. 12]

LEED Patterns

SiC (0001) 3C - LEED Pattern 120 eV
SiC (0001) 3C - LEED Pattern 120 eV
SiC (0001) 3C - LEED Pattern 170 eV
SiC (0001) 3C - LEED Pattern 170 eV
SiC (0001) 3C - LEED Pattern 490 eV
SiC (0001) 3C - LEED Pattern 490 eV

SiC (0001) 3C - AES Spectrum

SiC (0001) 3C - AES Spectrum
SiC (0001) 3C - AES Spectrum

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