Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Si (111) - Silicon
Substrate Specifications
- Material: Silicon (111)
- Size: 10 × 10 × 0.5 mm
- Orientation: (111)
- Structure: Diamond Cubic
- Lattice Constant: a = 5.43 Å
- Type/Dopant: N Type/undoped
- Growth Method: Czochralski
- Melting Temperature: 1414 °C
- Debye Temperature (at 27 °C): 370 °C[Ref. 6]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealing at 720 °C (estimated temperature of sample) for 2 minutes
- Applications: Solid state devices, microelectronics, lasers, and in solar panels
LEED Patterns
Si (111) - LEED Pattern 80 eV
Si (111) - LEED Pattern 110 eV
Si (111) - LEED Pattern 145 eV
Si (111) - AES Spectrum
Si - AES Spectrum
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