Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Si (001) - Silicon
Substrate Specifications
- Material: Silicon (001)
- Size: 10 × 10 × 0.5 mm
- Orientation: (001)
- Structure: 1×1
- Lattice Constant: a = 3.88 Å
- Type/Dopant: N Type/undoped
- Growth Method: Czochralski
- Melting Temperature: 1414 °C
- Debye Temperature (at 27 °C): 370 °C [Ref. 6]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model LEED 800
- UHV Treatment: Annealing at 720 °C (estimated temperature of sample) for 2 minutes
- Applications: Solid state devices, microelectronics, lasers, and in solar panels
LEED Pattern Silicon (001) Structure 1x1
Si (001) Structure: 1x1 - LEED Pattern
LEED Pattern Silicon (001) Structure 2x6
Si (001) Structure: 2x6 - LEED Pattern
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