Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Ge (100) - Germanium
Substrate Specifications
- Material: Germanium
- Size: 10 × 10 × 0.5
- Orientation: (100)
- Structure: Face Centered Diamond Cubic
- Lattice Constant: a = 5.658 Å
- Type/Dopant: Undoped
- Growth Method: Czochralski
- Melting Temperature: 938 °C
- Debye Temperature: 97 °C [Ref. 12]
- Surface Debye Temperature: Unpublished
- Characterization Instrument Used: MCP-LEED
Model LEED 800 MCP1
- UHV Treatment: Flash Annealing at 800 °C
- Applications: Semiconductor as a transistor and used to produce alloys
LEED Patterns
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