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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > Ga2O3-β (010) - Gallium Oxide v2

  • Material: β-Gallium Oxide
  • Size: 10 mm x 10 mm x 0.35 mm
  • Orientation: (010) ± 1°
  • Structure: Monoclinic
  • Lattice Constant: a = 12.23 Å b = 3.04 Å c = 5.80 Å β = 103.7 °
  • Type/Dopant: Semi-insulating Fe-doped
  • Growth Method: Czochralski Method
  • Melting Temperature: 1900 °C
  • Debye Temperature: 738 K [Ref. 14]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model: BDL800IR
  • UHV Treatment: Annealing
  • Applications: ultra-low power loss, high-efficiency power applications, and used in field effect transistors [Ref. 15]

LEED Patterns

Ga2O3 (010) - LEED Pattern 75 eV
Ga2O3 (010) - LEED Pattern 75 eV
Ga2O3 (010) - LEED Pattern 100 eV
Ga2O3 (010) - LEED Pattern 100 eV
Ga2O3 (010) - LEED Pattern 215 eV
Ga2O3 (010) - LEED Pattern 215 eV

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