Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > GGG (111) - Gadollinium Gallium Garnet
Substrate Specifications
- Material: Gadollinium Gallium Garnet
- Size: 5 × 5 × 0.5 mm
- Orientation: (111)
- Structure: Cubic
- Lattice Constant: a = 12.38 Å
- Type/Dopant: Undoped
- Growth Method: Czochralski
- Melting Temperature: 1800 °C
- Debye Temperature: 250 °C[Ref. 7]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
- Model LEED 800
- UHV Treatment: Annealing at 520 °C (estimated temperature of sample) for 2 minutes
- Applications: Semiconductor electronics and in the optical industry
LEED Patterns
GGG (111) - LEED Pattern 205 eV
GGG (111) - LEED Pattern 235 eV
GGG (111) - LEED Pattern 275 eV
GGG (111) - AES Spectrum
GGG - AES Spectrum
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