Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Al2O3 (1-102) - Aluminium Oxide
Substrate Specifications
- Material: Aluminium Oxide
- Size: 10 mm x 10 mm x 0.5 mm
- Orientation: R-plane (1-102)
- Structure: Hexagonal
- Lattice Constant: a = 4.758 Å c = 12.99 Å
- Type/Dopant: Undoped
- Growth Method: Czochralski
- Melting Temperature: 2040 °C
- Debye Temperature: 1042 K [Ref. 32]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model BDL800IR
- UHV Treatment: Annealing
- Applications: used in ceramic materials, III-V nitrides, superconductor and magnetic epitaxy film [Ref. 33]
LEED Patterns
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