Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Al2O3 (0001) - Aluminium Oxide
Substrate Specifications
- Material: Aluminium Oxide
- Size: 10 mm x 5 mm x 0.5 mm
- Orientation: C-plane (0001) with edge (11-20)
- Structure: Hexagonal
- Lattice Constant: a = 4.758 Å c = 12.992 Å
- Type/Dopant: Undoped
- Growth Method: Czochralski
- Melting Temperature: 2040 °C
- Debye Temperature: 726.85 °C at 26.85 °C (for Al2O3, orientation not provided) [Ref. 15]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model BDL800IR
- UHV Treatment: Annealing at 693 °C (estimated temperature of the sample) for 5 minutes
- Applications: used extensively as a substrate for epitaxial films (nitrides and many others)
LEED Patterns
Al2O3 0001 - AES Spectrum
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